The IGBT combines in it all the advantages of the bipolar and MOS field effect transistor. Ascan be seen from the structures shown below, the only difference lies in the additionalp-zone of the IGBT. Due to the presence of this layer, holes are injected into the highlyresistive n-layer and a carrier overflow is created. This increase in conductivity of the n-layerallows to reduce the on-state voltage of the IGBT.
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