CuInGaSe2 (CIGS) materials have bee

CuInGaSe2 (CIGS) materials have been used as a light absorber in thin ﬁlm solar cells due to their suitable energy band-gap (∼1.4 eV) and a high absorption coefﬁcient (∼104 cm−1) [1–3]. However, the indium and selenium used in CIGS material are rare in the earth, and this means there are some restrictions in near future, when the energy production systems are built in large scale [1, 3]. Thus, it is necessary to develop alternative materials from earth-abundant resources, and this issue has stimulated researches to develop alternative absorption layers composed of earth-abundant elements. Currently, Cu2ZnSnS4 (CZTS) materials have become interested as promising light absorption materials for low-cost photovoltaic devices, because CZTS materials are made of earth-abundant elements, and contain environment-friendly, stable compounds. In addition, CZTS materials are suitable for photovoltaic devices due to its suitable optical band-gap(∼1.4eV)andlargeabsorption coefﬁcient (∼104 cm−1) [2–6]. Deposition methods of CZTSthin ﬁlms can be largely classiﬁed into a vacuum method and a non-vacuum method. The vacuum-based methods have many advantages such as high reproducibility with high quality and ease of control in composition [1–3]. However, vacuum-based methods have suffered from low deposition rate, high production cost, and limitation of precurso rmaterials.On the otherhand,non-vacuum methods have advantages in relatively easy processing sequence, high growth rate, and low production cost [1–6], although they suffer from relatively lower device performance. Especially, it is important to prepare suitable precursor ink in non-vacuum methods and the deposition process is determined by properties of precursor ink. In this study, the CZTS inks were prepared at room temperature using chlorine based precursors (CuCl2, ZnCl 2, and SnCl2) and sodium chloride (NaCl) as a crystallization catalyst was added to investigate the effect of NaCl during annealing process.Thechemical reaction for the synthesis of CZTS inks was activated by a sonochemical method and CZTS ﬁlm depositions were carried out by spray method. Furthermore, we proposed the mechanism for crystallization enhancement due to NaCl addition.
Experimental Details CuCl2 (97%, Aldrich), ZnCl2 (98%, Aldrich), SnCl2 (98%, Aldrich) and thiourea (99%, Aldrich) are used as precursor materials to prepare crystallized CZTS inks. 2methoxyethanol (99.3%, Aldrich) is used as solvent, monoethanolamine (99%, TCI) is used as stabilizer to prevent premature formation of precipitates, and NaCl is added as catalyst. The atomic ratio of Cu, Zn, Sn, and S precursor used in the synthesis is 2:1:1:4, and the concentration of NaCl (99.9%, Aldrich) is varied from 0 to 0.04 mmol to study the effect of NaCl addition. First, CuCl2, ZnCl 2, SnCl2 and NaCl are dissolved into the mixture of 2-methoxyethanol and monoethanolamine (MEA), and then thiourea is added into the prepared solution. As-prepared solutions are sonochemically treated for 30 min at room temperature, and the ultrasonic power of 30 W is continuously applied using an ultrasonic machine operated at 20 kHz (Sonics & Materials, VCX 750). After the sonochemical reaction, a dark grey colored solution is acquired, and this CZTS ink is sprayed onto Mo-coated glass substrates, keeping the substrate temperature at 150◦C to remove the solventandstabilizerduringthespray-coatingprocess.Thespray-coatingiscarriedoutfor 2 min at the spraying rate of 1 mL/min. As-deposited CZTS ﬁlms are ﬁnally sintered in vacuum for 1 h. ThestructuralpropertiesofCZTSﬁlmsareinvestigatedbyX-raydiffractometer(XRD, Philips X’Pert-APD), and the optical properties of the ﬁlms are studied by UV-Vis NIR spectrometer (Varian, Cary 5000). The morphologies of CZTS ﬁlms are characterized by scanning electron microscope (SEM, Hitachi S-4200) operated at 25 kV, and elemental analyses of the ﬁlms are carried out using an energy dispersive X-ray spectroscopy (EDS and EMAX).
Results and Discussion Figure 1(a) and 1(b) show X-ray diffraction (XRD) patterns of CZTS ﬁlms formed using a normal and CZTS ink containing NaCl, respectively. All the CZTS ﬁlms show clear diffractionpeaksfromthe(112),(220),and(312)crystalplanesirrespectivelyofannealing
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Figure 1. X-ray diffraction (XRD) patterns of as-deposited and annealed CZTS ﬁlms: (a) CZTS ﬁlms deposited using normal ink and (b) CZTS ﬁlms formed using CZTS ink containing NaCl.
processandNaCl,inwhichthepeakscorrespondtokesteritephase(JCPDScard26-0575). The kesterite phase has a tetragonal unit cell including sulfur atoms positioned in a face centered cubic (fcc) sublattice and other atoms (Cu, Zn, and Sn) occupying half of the tetrahedral interstitial sites within the S sublattice [5, 7, 8]. The XRD patterns of CZTS ﬁlmsformedfromthenormalCZTSinksandinkscontainingNaClexhibitslightdifference in full-width at half maximum (FWHM) value, but the presence of NaCl does not change thecrystallinephasesofCZTSﬁlms,whethertheﬁlmsareannealedornot.Inaddition,the NaCl diffraction peak is observed independently in XRD spectra, as shown in Fig. 1. This impliesthat theNaCl isnot incorporated intotheCZTS materialsand justactsasacatalyst material toplayimportant rolesinenhancing thecrystallinityofCZTSﬁlms.Thevariation of FWHM value and the grain size of CZTS ﬁlms as a function of NaCl concentration are shown in Fig. 2. The grain size of CZTS is calculated using the Scherrer’s equation, and the equation is given by [9]:
D =
0.9λ (B −b)cosθ
(1)
where, D is the grain size, λ is the wavelength of CuKα X-ray source, B is the FWHM value of a diffraction peak, b is the instrumental line broadening, and θ is the diffraction angle. The grain size of CZTS ﬁlms increases with the rise of NaCl concentration and the existenceofNaClasacatalystplaysaninterestingroletodeterminethecrystallinity.Thus, theincreaseofgrainsizeiscloselyrelatedtotheelectrontransferduringthecrystallization

CuInGaSe2 (CIGS) materials have been used as a light absorber in thin ﬁlm solar cells due to their suitable energy band-gap (∼1.4 eV) and a high absorption coefﬁcient (∼104 cm−1) [1–3]. However, the indium and selenium used in CIGS material are rare in the earth, and this means there are some restrictions in near future, when the energy production systems are built in large scale [1, 3]. Thus, it is necessary to develop alternative materials from earth-abundant resources, and this issue has stimulated researches to develop alternative absorption layers composed of earth-abundant elements. Currently, Cu2ZnSnS4 (CZTS) materials have become interested as promising light absorption materials for low-cost photovoltaic devices, because CZTS materials are made of earth-abundant elements, and contain environment-friendly, stable compounds. In addition, CZTS materials are suitable for photovoltaic devices due to its suitable optical band-gap(∼1.4eV)andlargeabsorption coefﬁcient (∼104 cm−1) [2–6]. Deposition methods of CZTSthin ﬁlms can be largely classiﬁed into a vacuum method and a non-vacuum method. The vacuum-based methods have many advantages such as high reproducibility with high quality and ease of control in composition [1–3]. However, vacuum-based methods have suffered from low deposition rate, high production cost, and limitation of precurso rmaterials.On the otherhand,non-vacuum methods have advantages in relatively easy processing sequence, high growth rate, and low production cost [1–6], although they suffer from relatively lower device performance. Especially, it is important to prepare suitable precursor ink in non-vacuum methods and the deposition process is determined by properties of precursor ink. In this study, the CZTS inks were prepared at room temperature using chlorine based precursors (CuCl2, ZnCl 2, and SnCl2) and sodium chloride (NaCl) as a crystallization catalyst was added to investigate the effect of NaCl during annealing process.Thechemical reaction for the synthesis of CZTS inks was activated by a sonochemical method and CZTS ﬁlm depositions were carried out by spray method. Furthermore, we proposed the mechanism for crystallization enhancement due to NaCl addition.
Experimental Details CuCl2 (97%, Aldrich), ZnCl2 (98%, Aldrich), SnCl2 (98%, Aldrich) and thiourea (99%, Aldrich) are used as precursor materials to prepare crystallized CZTS inks. 2methoxyethanol (99.3%, Aldrich) is used as solvent, monoethanolamine (99%, TCI) is used as stabilizer to prevent premature formation of precipitates, and NaCl is added as catalyst. The atomic ratio of Cu, Zn, Sn, and S precursor used in the synthesis is 2:1:1:4, and the concentration of NaCl (99.9%, Aldrich) is varied from 0 to 0.04 mmol to study the effect of NaCl addition. First, CuCl2, ZnCl 2, SnCl2 and NaCl are dissolved into the mixture of 2-methoxyethanol and monoethanolamine (MEA), and then thiourea is added into the prepared solution. As-prepared solutions are sonochemically treated for 30 min at room temperature, and the ultrasonic power of 30 W is continuously applied using an ultrasonic machine operated at 20 kHz (Sonics & Materials, VCX 750). After the sonochemical reaction, a dark grey colored solution is acquired, and this CZTS ink is sprayed onto Mo-coated glass substrates, keeping the substrate temperature at 150◦C to remove the solventandstabilizerduringthespray-coatingprocess.Thespray-coatingiscarriedoutfor 2 min at the spraying rate of 1 mL/min. As-deposited CZTS ﬁlms are ﬁnally sintered in vacuum for 1 h. ThestructuralpropertiesofCZTSﬁlmsareinvestigatedbyX-raydiffractometer(XRD, Philips X’Pert-APD), and the optical properties of the ﬁlms are studied by UV-Vis NIR spectrometer (Varian, Cary 5000). The morphologies of CZTS ﬁlms are characterized by scanning electron microscope (SEM, Hitachi S-4200) operated at 25 kV, and elemental analyses of the ﬁlms are carried out using an energy dispersive X-ray spectroscopy (EDS and EMAX).
Results and Discussion Figure 1(a) and 1(b) show X-ray diffraction (XRD) patterns of CZTS ﬁlms formed using a normal and CZTS ink containing NaCl, respectively. All the CZTS ﬁlms show clear diffractionpeaksfromthe(112),(220),and(312)crystalplanesirrespectivelyofannealing
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146/[398] H. T. Kim et al.
Figure 1. X-ray diffraction (XRD) patterns of as-deposited and annealed CZTS ﬁlms: (a) CZTS ﬁlms deposited using normal ink and (b) CZTS ﬁlms formed using CZTS ink containing NaCl.
processandNaCl,inwhichthepeakscorrespondtokesteritephase(JCPDScard26-0575). The kesterite phase has a tetragonal unit cell including sulfur atoms positioned in a face centered cubic (fcc) sublattice and other atoms (Cu, Zn, and Sn) occupying half of the tetrahedral interstitial sites within the S sublattice [5, 7, 8]. The XRD patterns of CZTS ﬁlmsformedfromthenormalCZTSinksandinkscontainingNaClexhibitslightdifference in full-width at half maximum (FWHM) value, but the presence of NaCl does not change thecrystallinephasesofCZTSﬁlms,whethertheﬁlmsareannealedornot.Inaddition,the NaCl diffraction peak is observed independently in XRD spectra, as shown in Fig. 1. This impliesthat theNaCl isnot incorporated intotheCZTS materialsand justactsasacatalyst material toplayimportant rolesinenhancing thecrystallinityofCZTSﬁlms.Thevariation of FWHM value and the grain size of CZTS ﬁlms as a function of NaCl concentration are shown in Fig. 2. The grain size of CZTS is calculated using the Scherrer’s equation, and the equation is given by [9]:
D =
0.9λ (B −b)cosθ
(1)
where, D is the grain size, λ is the wavelength of CuKα X-ray source, B is the FWHM value of a diffraction peak, b is the instrumental line broadening, and θ is the diffraction angle. The grain size of CZTS ﬁlms increases with the rise of NaCl concentration and the existenceofNaClasacatalystplaysaninterestingroletodeterminethecrystallinity.Thus, theincreaseofgrainsizeiscloselyrelatedtotheelectrontransferduringthecrystallization

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Kết quả (Việt) 1: [Sao chép]

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CuInGaSe2 (CIGS) materials have been used as a light absorber in thin ﬁlm solar cells due to their suitable energy band-gap (∼1.4 eV) and a high absorption coefﬁcient (∼104 cm−1) [1–3]. However, the indium and selenium used in CIGS material are rare in the earth, and this means there are some restrictions in near future, when the energy production systems are built in large scale [1, 3]. Thus, it is necessary to develop alternative materials from earth-abundant resources, and this issue has stimulated researches to develop alternative absorption layers composed of earth-abundant elements. Currently, Cu2ZnSnS4 (CZTS) materials have become interested as promising light absorption materials for low-cost photovoltaic devices, because CZTS materials are made of earth-abundant elements, and contain environment-friendly, stable compounds. In addition, CZTS materials are suitable for photovoltaic devices due to its suitable optical band-gap(∼1.4eV)andlargeabsorption coefﬁcient (∼104 cm−1) [2–6]. Deposition methods of CZTSthin ﬁlms can be largely classiﬁed into a vacuum method and a non-vacuum method. The vacuum-based methods have many advantages such as high reproducibility with high quality and ease of control in composition [1–3]. However, vacuum-based methods have suffered from low deposition rate, high production cost, and limitation of precurso rmaterials.On the otherhand,non-vacuum methods have advantages in relatively easy processing sequence, high growth rate, and low production cost [1–6], although they suffer from relatively lower device performance. Especially, it is important to prepare suitable precursor ink in non-vacuum methods and the deposition process is determined by properties of precursor ink. In this study, the CZTS inks were prepared at room temperature using chlorine based precursors (CuCl2, ZnCl 2, and SnCl2) and sodium chloride (NaCl) as a crystallization catalyst was added to investigate the effect of NaCl during annealing process.Thechemical reaction for the synthesis of CZTS inks was activated by a sonochemical method and CZTS ﬁlm depositions were carried out by spray method. Furthermore, we proposed the mechanism for crystallization enhancement due to NaCl addition.Experimental Details CuCl2 (97%, Aldrich), ZnCl2 (98%, Aldrich), SnCl2 (98%, Aldrich) and thiourea (99%, Aldrich) are used as precursor materials to prepare crystallized CZTS inks. 2methoxyethanol (99.3%, Aldrich) is used as solvent, monoethanolamine (99%, TCI) is used as stabilizer to prevent premature formation of precipitates, and NaCl is added as catalyst. The atomic ratio of Cu, Zn, Sn, and S precursor used in the synthesis is 2:1:1:4, and the concentration of NaCl (99.9%, Aldrich) is varied from 0 to 0.04 mmol to study the effect of NaCl addition. First, CuCl2, ZnCl 2, SnCl2 and NaCl are dissolved into the mixture of 2-methoxyethanol and monoethanolamine (MEA), and then thiourea is added into the prepared solution. As-prepared solutions are sonochemically treated for 30 min at room temperature, and the ultrasonic power of 30 W is continuously applied using an ultrasonic machine operated at 20 kHz (Sonics & Materials, VCX 750). After the sonochemical reaction, a dark grey colored solution is acquired, and this CZTS ink is sprayed onto Mo-coated glass substrates, keeping the substrate temperature at 150◦C to remove the solventandstabilizerduringthespray-coatingprocess.Thespray-coatingiscarriedoutfor 2 min at the spraying rate of 1 mL/min. As-deposited CZTS ﬁlms are ﬁnally sintered in vacuum for 1 h. ThestructuralpropertiesofCZTSﬁlmsareinvestigatedbyX-raydiffractometer(XRD, Philips X’Pert-APD), and the optical properties of the ﬁlms are studied by UV-Vis NIR spectrometer (Varian, Cary 5000). The morphologies of CZTS ﬁlms are characterized by scanning electron microscope (SEM, Hitachi S-4200) operated at 25 kV, and elemental analyses of the ﬁlms are carried out using an energy dispersive X-ray spectroscopy (EDS and EMAX).Results and Discussion Figure 1(a) and 1(b) show X-ray diffraction (XRD) patterns of CZTS ﬁlms formed using a normal and CZTS ink containing NaCl, respectively. All the CZTS ﬁlms show clear diffractionpeaksfromthe(112),(220),and(312)crystalplanesirrespectivelyofannealing
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Figure 1. X-ray diffraction (XRD) patterns of as-deposited and annealed CZTS ﬁlms: (a) CZTS ﬁlms deposited using normal ink and (b) CZTS ﬁlms formed using CZTS ink containing NaCl.
processandNaCl,inwhichthepeakscorrespondtokesteritephase(JCPDScard26-0575). The kesterite phase has a tetragonal unit cell including sulfur atoms positioned in a face centered cubic (fcc) sublattice and other atoms (Cu, Zn, and Sn) occupying half of the tetrahedral interstitial sites within the S sublattice [5, 7, 8]. The XRD patterns of CZTS ﬁlmsformedfromthenormalCZTSinksandinkscontainingNaClexhibitslightdifference in full-width at half maximum (FWHM) value, but the presence of NaCl does not change thecrystallinephasesofCZTSﬁlms,whethertheﬁlmsareannealedornot.Inaddition,the NaCl diffraction peak is observed independently in XRD spectra, as shown in Fig. 1. This impliesthat theNaCl isnot incorporated intotheCZTS materialsand justactsasacatalyst material toplayimportant rolesinenhancing thecrystallinityofCZTSﬁlms.Thevariation of FWHM value and the grain size of CZTS ﬁlms as a function of NaCl concentration are shown in Fig. 2. The grain size of CZTS is calculated using the Scherrer’s equation, and the equation is given by [9]:
D =
0.9λ (B −b)cosθ
(1)
where, D is the grain size, λ is the wavelength of CuKα X-ray source, B is the FWHM value of a diffraction peak, b is the instrumental line broadening, and θ is the diffraction angle. The grain size of CZTS ﬁlms increases with the rise of NaCl concentration and the existenceofNaClasacatalystplaysaninterestingroletodeterminethecrystallinity.Thus, theincreaseofgrainsizeiscloselyrelatedtotheelectrontransferduringthecrystallization

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CuInGaSe2 (CIGS) vật liệu đã được sử dụng như một chất hấp thụ ánh sáng trong fi lm tế bào năng lượng mặt trời mỏng do phù hợp năng lượng band-gap họ (~1.4 eV) và một sự hấp thụ cao coef fi cient (~104 cm-1) [1-3]. Tuy nhiên, indium và selen được sử dụng trong các tài liệu CIGS là rất hiếm trên trái đất, và điều này có nghĩa là có một số hạn chế trong tương lai gần, khi các hệ thống sản xuất năng lượng được xây dựng với quy mô lớn [1, 3]. Vì vậy, nó là cần thiết để phát triển vật liệu thay thế từ tài nguyên đất dồi dào, và vấn đề này đã kích thích nghiên cứu để phát triển các lớp hấp thụ thay thế bao gồm các nguyên tố đất dồi dào. Hiện nay, Cu2ZnSnS4 (CZTS) vật liệu đã trở nên quan tâm là có triển vọng vật liệu hấp thụ ánh sáng cho các thiết bị quang điện chi phí thấp, vì những vật liệu CZTS được làm bằng các nguyên tố đất dồi dào, và có môi trường thân thiện, hợp chất ổn định. Ngoài ra, CZTS vật liệu phù hợp cho các thiết bị quang điện do quang học thích hợp của nó band-gap (~1.4eV) andlargeabsorption coef fi cient (~104 cm-1) [2-6]. Phương pháp lắng đọng của CZTSthin LMS fi có thể là phần lớn phân loại fi ed thành một phương pháp hút chân không và một phương pháp không chân không. Các phương pháp hút chân không tự động có nhiều ưu điểm như khả năng tái cao với chất lượng cao và dễ điều khiển trong phần [1-3]. Tuy nhiên, phương pháp hút chân không dựa trên đã bị từ thấp tỷ lệ lắng đọng, chi phí sản xuất cao, và hạn chế precurso rmaterials.On otherhand, phương pháp không chân không có lợi thế về trình tự tương đối dễ dàng xử lý, tốc độ tăng trưởng cao, và chi phí sản xuất thấp [1- 6], mặc dù họ bị từ thiết bị hiệu suất tương đối thấp. Đặc biệt, điều quan trọng để chuẩn bị tiền thân mực phù hợp trong phương pháp không chân không là quá trình lắng đọng và được xác định bởi tính chất của mực in tiền. Trong nghiên cứu này, các loại mực CZTS đã được chuẩn bị ở nhiệt độ phòng bằng cách sử dụng tiền chất clo dựa (CuCl2, ZnCl 2, và SnCl2) và natri clorua (NaCl) như là một chất xúc tác kết tinh đã được bổ sung để điều tra tác dụng của NaCl trong ủ phản ứng process.Thechemical cho việc tổng hợp các loại mực CZTS đã được kích hoạt bằng một phương pháp sonochemical và CZTS fi depositions lm được thực hiện bằng phương pháp phun. Hơn nữa, chúng tôi đề xuất các cơ chế để nâng cao tinh do NaCl ngoài.
Thông tin chi tiết thí nghiệm CuCl2 (97%, Aldrich), ZnCl2 (98%, Aldrich), SnCl2 (98%, Aldrich) và thiourea (99%, Aldrich) được sử dụng như vật liệu tiền thân để chuẩn bị CZTS mực tinh. 2methoxyethanol (99,3%, Aldrich) được sử dụng làm dung môi, Monoethanolamine (99%, TCI) được sử dụng làm chất ổn định để ngăn chặn sự hình thành sớm của kết tủa, và NaCl được thêm vào như là chất xúc tác. Tỷ lệ nguyên tử của Cu, Zn, Sn, và S tiền thân được sử dụng trong quá trình tổng hợp là 2: 1: 1: 4, và nồng độ NaCl (99,9%, Aldrich) là đa dạng 0-0,04 mmol để nghiên cứu tác động của NaCl thêm vào. Đầu tiên, CuCl2, ZnCl 2, SnCl2 và NaCl hòa tan vào hỗn hợp của 2-methoxyethanol và Monoethanolamine (MEA), và sau đó thiourea được thêm vào dung dịch được chuẩn bị. Khi chuẩn bị các giải pháp được sonochemically điều trị trong 30 phút ở nhiệt độ phòng, và sức mạnh siêu âm là 30 W liên tục đã áp dụng bằng cách sử dụng một máy siêu âm hoạt động ở 20 kHz (Sonics & Vật liệu, VCX 750). Sau khi phản ứng sonochemical, một giải pháp màu xám đen tối được mua lại, và điều này CZTS mực được phun lên chất nền thủy tinh Mo-tráng, giữ cho nhiệt độ bề mặt ở 150◦C để loại bỏ các solventandstabilizerduringthespray-coatingprocess.Thespray-coatingiscarriedoutfor 2 phút ở tốc độ phun 1 ml / phút. Như chưa lưu ký CZTS LMS fi fi nally kết dính trong chân không cho 1 h. ThestructuralpropertiesofCZTS fi lmsareinvestigatedbyX-raydiffractometer (XRD, Philips X'Pert-APD), và các tính chất quang học của các LMS fi được nghiên cứu bởi UV-Vis NIR phổ kế (Varian, Cary 5000). Các hình thái của CZTS LMS fi được đặc trưng bằng cách quét kính hiển vi điện tử (SEM, Hitachi S-4200) hoạt động ở 25 kV, và phân tích nguyên tố của các LMS fi được thực hiện bằng cách sử dụng một máy quang phổ tán sắc năng lượng X-ray (EDS và EMAX).
Kết quả và thảo luận Hình 1 (a) và 1 (b) nhiễu xạ chương trình X-ray (XRD) mô hình của CZTS LMS fi được hình thành bằng cách sử dụng một mực bình thường và CZTS chứa NaCl, tương ứng. Tất cả các LMS fi CZTS thấy diffractionpeaksfromthe rõ ràng (112), (220), và (312) crystalplanesirrespectivelyofannealing
tải bởi [Hàn Quốc Đại học] tại 14:13 ngày 04 Tháng 1 năm 2015
146 / [398] HT Kim et al.
Hình 1. Nhiễu xạ tia X (XRD) mô hình như chưa lưu ký và ủ CZTS LMS fi: (a) CZTS LMS fi lưu ký sử dụng mực bình thường và (b) CZTS LMS fi được hình thành bằng cách sử dụng mực CZTS chứa NaCl.
processandNaCl, inwhichthepeakscorrespondtokesteritephase (JCPDScard26-0575). Giai đoạn kesterite có một tế bào có bốn gốc đơn vị bao gồm các nguyên tử lưu huỳnh vị trí trong một khuôn mặt trung tâm khối (fcc) sublattice và các nguyên tử khác (Cu, Zn, và Sn) chiếm một nửa trong số các trang web kẽ tứ diện trong S sublattice [5, 7, 8] . Các mẫu XRD của CZTS fi lmsformedfromthenormalCZTSinksandinkscontainingNaClexhibitslightdifference trong chiều rộng toàn ở nửa tối đa (FWHM) giá trị, nhưng sự hiện diện của NaCl không thay đổi LMS fi thecrystallinephasesofCZTS, whetherthe fi lmsareannealedornot.Inaddition, nhiễu xạ cao điểm NaCl được quan sát một cách độc lập trong phổ XRD, như thể hiện trong hình. 1. impliesthat theNaCl IsNot intotheCZTS hợp materialsand justactsasacatalyst liệu này toplayimportant rolesinenhancing thecrystallinityofCZTS fi lms.Thevariation của FWHM giá trị và kích thước hạt của CZTS LMS fi là hàm của nồng độ NaCl được hiển thị trong hình. 2. Kích thước hạt của CZTS được tính toán bằng cách sử dụng phương trình của Scherrer, và các phương trình được cho bởi [9]:
D =
0.9λ (B -b) cosθ
(1)
nơi, D là kích thước hạt, λ là bước sóng của CuKα nguồn X-ray, B là giá trị FWHM của đỉnh nhiễu xạ, b là đường mở rộng cụ, và θ là góc nhiễu xạ. Kích thước hạt của CZTS LMS fi tăng lên cùng với sự gia tăng của nồng độ NaCl và existenceofNaClasacatalystplaysaninterestingroletodeterminethecrystallinity.Thus, theincreaseofgrainsizeiscloselyrelatedtotheelectrontransferduringthecrystallization

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